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FGH30N60LSD
August 2007
FGH30N60LSD
Features
* Low saturation voltage: VCE(sat) =1.1V @ IC = 30A * High Input Impedance * Low Conduction Loss
tm
General Description
The FGH30N60LSD is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
Applications
* Solar Inverters * UPS, Welder
E
C G
C
G
COLLECTOR (FLANGE)
E
Absolute Maximum Ratings
Symbol
VCES VGES IC ICM (1) IFSM PD TJ Tstg TL
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
Description
Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds @ TC = 25C @ TC = 100C @ TC = 25C @ TC = 100C
FGH30N60LSD
600 20 60 30 90 150 480 192 -55 to +150 -55 to +150 300
Units
V V A A A A W W C C C
Thermal Characteristics
Symbol
RJC(IGBT) RJC(Diode) RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Typ.
----
Max.
0.26 0.92 40
Units
C/W C/W C/W
(c)2006 Fairchild Semiconductor Corporation
1
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FGH30N60LSD Rev. A1
FGH30N60LSD
Package Marking and Ordering Information
Device Marking
FGH30N60LSD
Device
FGH30N60LSDTU
Package
TO-247
Packaging Type
Tube
Max Qty Qty per Tube
30ea
per Box
-
Electrical Characteristics of the IGBT
Symbol
Off Characteristics BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current
TC = 25C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VGE = 0V, IC = 250uA VGE = 0V, IC = 250uA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V
600 ----
-0.6 ---
--250 250
V V/C uA nA
On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 250uA, VCE = VGE IC = 30A, VGE = 15V IC = 30A, VGE = 15V, TC = 125C IC = 60 A, VGE = 15V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---3550 245 90 ---pF pF pF 4.0 ---5.5 1.1 1.0 1.3 7.0 1.4 --V V V V
Switching Characteristics td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance VCE = 600 V, IC = 30A, VGE = 15V Measured 5mm from PKG VCC = 400 V, IC = 30A, RG =6.8, VGE = 15V, Inductive Load, TC = 125C VCC = 400 V, IC = 30A, RG = 6.8, VGE = 15V, Inductive Load, TC = 25C ----------------18 46 250 1.3 1.1 21 17 45 270 2.6 1.1 36 225 30 105 7 ---2.0 ------------ns ns ns us mJ mJ ns ns ns us mJ mJ nC nC nC nH
2 FGH30N60LSD Rev. A1
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FGH30N60LSD
Electrical Characteristics of the Diode
Parameter
VFM IRM trr ta tb Qrr IF = 15A IF = 15A VR = 600V IF =1A, di/dt = 100A/s, VCC = 30V IF =15A, di/dt = 100A/s, VCC = 390V IF =15A, di/dt = 100A/s, VCC = 390V
TC = 25C unless otherwise noted
Conditions
TC = 25 C TC = 125 C TC = 25 C TC = 25 C TC = 25 C TC = 25 C TC = 25 C TC = 25 C
Min.
-
Typ.
1.8 1.6 18 13 27.5
Max
2.2 100 35 40 -
Units
V V A ns ns ns ns nC
3 FGH30N60LSD Rev. A1
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FGH30N60LSD
Typical Performance Characteristics
Figure 1.Typical Output Characteristics
90
TC = 25 C
o
Figure 2. Typical Saturation Voltage Characteristics
90
TC = 125 C
o
VGE = 20V
VGE = 20V 15V 12V 10V 8V
Collector Current, IC [A]
60
Collector Current, IC [A]
15V 12V 10V 8V
60
30
30
0 0 1 2 3 Collector-Emitter Voltage, VCE [V] 4
0 0 1 2 3 Collector-Emitter Voltage, VCE [V] 4
Figure 3. Typical Saturation Voltage Characteritics
90
Common Emitter VGE = 15V
Figure 4. Transfer characteristics
90
Common Emitter VCE = 20V
o o
Collector Current, IC [A]
60
TC = 125 C
o
Collector Current, IC [A]
TC = 25 C
o
TC = 25 C TC = 125 C
60
30
30
0 0 1 2 Collector-Emitter Voltage, VCE [V] 3
0 0 2 4 6 8 10 Gate-Emitter Voltage,VGE [V] 12
Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level
1.4
Collector-Emitter Voltage, VCE [V]
Common Emitter VGE = 15V 60A
Figure 6. Saturation Voltage vs. Vge
20
Common Emitter
Collector-Emitter Voltage, VCE [V]
16
T = 25 C
C
o
1.2
12
1.0
30A
8
IC = 15A
0.8
4
30A IC = 15A
60A
0.6 25
0
50 75 100 125 o Collector-EmitterCase Temperature, TC [ C]
0
4 8 12 16 Gate-Emitter Voltage, VGE [V]
20
4 FGH30N60LSD Rev. A1
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FGH30N60LSD
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. Vge
20
Collector-Emitter Voltage, VCE [V]
Common Emitter TC = 125 C
o
(Continued)
Figure 8. Capacitance characteristics
13000 10000
Cies
16
Capacitance [pF]
12
Coes
Common Emitter VGE = 0V, f = 1MHz TC = 25 C
o
1000
Cres
8
30A 60A
4
IC = 15A
100
50
0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20
0
5 10 15 20 25 Collector-Emitter Voltage, VCE [V]
30
Figure 9. Gate Charge Characteristics
15
Common Emitter IC = 30A
Figure 10. SOA Characteeristics
300
Ic MAX (Pulsed)
Gate-Emitter Voltage, VGE [V]
Collector Current, Ic [A]
o 12 TC = 25 C
100
Vcc = 100V 300V 200V
50s Ic MAX (Continuous) 100s
9
10
1ms
6
1 Single Nonrepetitive o
3
Pulse TC = 25 C Curves must be derated linearly with increase in temperature
DC Operation
0 0 50 100 150 200 Gate Charge, Qg [nC] 250
0.1 0.1
1 10 100 1000 Collector-Emitter Voltage, VCE [V]
Figure 11. Load Current Vs. Frequency
80 70 60 50 40 30 20 10 0 0.1
Duty cycle : 50% o Tc = 100 C Powe Dissipation = 192W Vcc = 400V load Current : peak of square wave
Figure 12. Turn-On Characteristics vs. Gate Resistance
200
100
Switching Time [ns]
Load Current [A]
tr
td(on)
Common Emitter VCC = 400V, VGE = 15V IC = 30A TC = 25 C TC = 125 C
o o
1
10 100 Frequency [kHz]
1000
10 0 10 20 30 40 50
Gate Resistance, RG []
5 FGH30N60LSD Rev. A1
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FGH30N60LSD
Typical Performance Characteristics
Figure 13. Turn-Off Characteristics vs. Gate Resistance
3000
(Continued)
Figure 14. Turn-On Characteristics vs. Collector Current
500
Common Emitter VGE = 15V, RG = 6.8 TC = 25 C
o o
Switching Time [ns]
1000
tf
Switching Time [ns]
TC = 125 C
100
tr
td(off)
Common Emitter VCC = 400V, VGE = 15V IC = 30A TC = 25 C
o o
td(on)
10
100 0 10 20
TC = 125 C
30
40
50
20
30
40
50
60
70
80
Gate Resistance, RG []
Collector Current, IC [A]
Figure 15. Turn-Off Characteristics vs. Collector Current
6000
tf
Figure 16. Switching Loss vs Gate Resistance
500
Common Emitter VCC = 400V, VGE = 15V IC = 30A
Switching Time [ns]
Switching Loss [mJ]
o 100 TC = 25 C
TC = 125 C
o
1000
Common Emitter VGE = 15V, RG = 6.8 TC = 25 C td(off) TC = 125 C
o o
Eoff
10
Eon
100 20 30 40 50 60 70 80
Collector Current, IC [A]
1
5
10
15
20
25
30
35
40
45
50
Gate Resistance, RG []
Figure 17.Switching Loss vs Collector Current
100
Figure 18. Turn-Off Switching SOA Characteristics
200 100
Eoff
10
Eon
Collector Current, IC [A]
Switching Loss [mJ]
10
1
Common Emitter VGE = 15V, RG = 6.8 TC = 25 C TC = 125 C
o o
Safe Operating Area o VGE = 15V, TC = 125 C
0.1 10
1
20
30
40
50
60
70
80
1
Collector Current, IC [A]
10 100 1000 Collector-Emitter Voltage, VCE [V]
6 FGH30N60LSD Rev. A1
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FGH30N60LSD
Figure 19. Transient Thermal Impedance of IGBT
1
0.5
Thermal Response [Zthjc]
0.1
0.2 0.1 0.05
0.01
0.02
PDM t1 t2
0.01 single pulse
Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC
1E-3 1E-5
1E-4
1E-3 0.01 0.1 Rectangular Pulse Duration [sec]
1
10
Figure 20. Typical Forward Voltage Drop
Figure 21. Typical Reverse Current
100
1E-4
FPRWARD CURRENT, IF [A]
REVERSE CURRENT, IR [A]
1E-5
TC = 125 C
o
o
10
1E-6
TC=125 C
o
TC = 75 C
1E-7
1
TC=75 C
o
1E-8
TC = 25 C
o
TC=25 C
0.1 0.0
o
1E-9
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
0
100
200
300
400
500
600
FORWARD VOLTAGE, VF [V]
REVERSE VOLTAGE, VR [V]
Figure 22. Typical Reverse Recovery Time
200 190 180 170 160 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 100
REVERSE RECOVERY TIME, trr [ns]
IF = 15A
TC = 125 C
o
TC = 75 C
o
TC = 25 C
o
200
300
400
500
di/dt [A/s]
7 FGH30N60LSD Rev. A1
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FGH30N60LSD
Mechanical Dimensions
TO-247AD (FKS PKG CODE 001)
8 FGH30N60LSD Rev. A1
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FGH30N60LSD
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Datasheet Identification Advance Information
Product Status Formative or In Design First Production
Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I20
9 FGH30N60LSD Rev. A1
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